? 2006 ixys all rights reserved ds99605e(08/06) polarhv tm hiperfet power mosfet v dss = 800 v i d25 = 25 a r ds(on) 270 m t rr 250 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 3 ma 800 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 16a, note 1 270 m symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c29a i dm t c = 25 c, pulse width limited by t jm 250 a i ar t c = 25 c30a e ar t c = 25 c 100 mj e as t c = 25 c5j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 2 p d t c = 25 c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5 / 13 nm/lb.in. terminal connection torque 1.5 / 13 nm/lb.in. weight 30 g IXFN32N80P g d s s minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal. features ? international standard package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? minibloc with aluminium nitride isolation l fast recovery diode l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density
ixys reserves the right to change limits, test conditions, and dimensions. IXFN32N80P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 16a, note 1 20 38 s c iss 8820 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 660 pf c rss 22 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 16a 29 ns t d(off) r g = 2 (external) 85 ns t f 26 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 16 a 39 nc q gd 44 nc r thjc 0.2 c/w r thcs 0.05 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 60 a i sm repetitive 150 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v 0.8 c i rm 8.0 a notes: 1. pulse test, t 300 s, duty cycle d 2 % sot-227b outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys all rights reserved IXFN32N80P fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 4v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 0 3 6 9 12 15 18 21 24 v d s - volts i d - amperes v gs = 10v 6v 4v 5v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 012 34567 8910 v d s - volts i d - amperes v gs = 10v 6v 4v 5v fig. 4. r ds(on ) norm alize d to i d = 16a value vs. junction tem perature 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 32a i d = 16a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 16a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 10203040506070 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 6. drain current vs. case tem perature 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFN32N80P fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 400v i d = 16a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 45 33.5 44.5 5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source curre nt vs . source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. maxim um transient therm al resistance 0.00 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w ixys ref: f_32n80p (9j) 8-23-06-d
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